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GUNN Diodes
TM (R)
Cathode Heat Sink
MG1001 - MG1061
Discrete Frequency: Cathode Heatsink
Features

CW Designs to 500 mW Pulsed Designs to 10 W Frequency Coverage Specified from 5.9-95 GHz Low Phase Noise High Reliability
Applications

Motion Detectors Transmitters and Receivers Beacons Automotive Collision Avoidance Radars Radars Radiometers Instrumentation
Description
Microsemi's GaAs Gunn diodes, epi-down (cathode heatsink), are fabricated from epitaxial layers grown at MSC by the Vapor Phase Epitaxy technique. The layers are processed using proprietary techniques resulting in low phase and 1/f noise. MDT Gunn diodes are available in a variety of microwave ceramic packages are available for operation from 5-110 GHz.
Copyright 2008 Rev: 2009-01-19
Microsemi
Microwave Products
Page 1
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
GUNN Diodes
TM (R)
Cathode Heat Sink
MG1001 - MG1061
(Discrete Frequency: Cathode Heatsink)
C Band Gunn Diodes (Specifications @ 25C)
Part Number MG1001-11 MG1002-11 MG1003-15 MG1004-15 Operating Frequency1 (GHz) 5.9-8.2 5.9-8.2 5.9-8.2 5.9-8.2 Min. Power2 (mW) 50 100 250 500 Typ. Operating Voltage (V) 12 12 12 12 Operating Current Min. (mA) 200 300 600 900 Max. (mA) 400 600 1100 1300 Package Outline3 M11 M11 M15 M15
X Band Gunn Diodes (Specifications @ 25C)
Part Number MG1005-11 MG1006-11 MG1007-15 MG1008-15 Operating Frequency1 (GHz) 8.2-12.0 8.2-12.0 8.2-12.0 8.2-12.0 Min. Power2 (mW) 50 100 250 500 Typ. Operating Voltage (V) 10 10 10 10 Operating Current Min. (mA) 200 400 700 1000 Max. (mA) 400 700 1200 1600 Package Outline3 M11 M11 M15 M15
Ku Band Gunn Diodes (Specifications @ 25C)
Part Number MG1009-11 MG1010-11 MG1011-15 MG1012-15 Operating Frequency1 (GHz) 12.4-18.0 12.4-18.0 12.4-18.0 12.4-18.0 Min. Power2 (mW) 50 100 250 500 Typ. Operating Voltage (V) 8 8 8 8 Operating Current Min. (mA) 300 400 800 1100 Max. (mA) 500 800 1200 1700 Package Outline3 M11 M11 M15 M15
K Band Gunn Diodes (Specifications @ 25C)
Part Number MG1013-16 MG1014-16 MG1015-16 MG1016-17
1
Operating Frequency1 (GHz) 18.0-26.5 18.0-26.5 18.0-26.5 18.0-23.0
Min. Power2 (mW) 50 100 200 400
Typ. Operating Voltage (V) 6 6 6 6
Operating Current Min. (mA) 400 500 800 900 Max. (mA) 600 1000 1400 1700 Package Outline3 M16 M16 M16 M17
Microsemi Gunn diodes are specified to operate within a narrow range of a customer-designated center frequency within the operating frequency range shown. Additional frequencies are available; Please contact the factory. 2 Power is measured using a critically coupled test cavity. For pulsed diodes, pulse width = 1 S, duty factor = 1% typ. 3 Polarity: anode is the cap and cathode is the heatsink.
Copyright 2008 Rev: 2009-01-19
Microsemi
Microwave Products
Page 2
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
GUNN Diodes
TM (R)
Cathode Heat Sink
MG1001 - MG1061
Gunn Diodes (Discrete Frequency: Cathode Heatsink)
Ka Band Gunn Diodes (Specifications @ 25C)
Part Number MG1017-16 MG1018-16 MG1019-16 MG1020-16 MG1039-16 MG1040-16 Operating Frequency1 (GHz) 26.5-40.0 26.5-40.0 26.5-40.0 26.5-40.0 26.5-35.0 26.5-35.0 Min. Power2 (mW) 50 100 200 250 300 350 Typ. Operating Voltage (V) 4.5 4.5 5.0 5.5 5.5 5.5 Operating Current Min. (mA) 300 600 800 800 1000 1000 Max. (mA) 700 1100 1400 1600 1700 1800 Package Outline3 M16 M16 M16 M16 M16 M16
U Band Gunn Diodes (Specifications @ 25C)
Part Number MG1021-16 MG1022-16 MG1023-16 Operating Frequency1 (GHz) 40.0-60.0 40.0-60.0 40.0-50.0 Min. Power2 (mW) 50 100 150 Typ. Operating Voltage (V) 4 4 4 Operating Current Min. (mA) 400 700 800 Max. (mA) 800 1200 1600 Package Outline3 M16 M16 M16
V and W Band Gunn Diodes (Specifications @ 25C)
Part Number MG1036-16 MG1037-16 MG1024-16 MG1025-16 MG1038-16 Operating Frequency1 (GHz) 60.5-85.0 60.5-85.0 85-95 85-95 85-95 Min. Power2 (mW) 10 50 10 20 50 Typ. Operating Voltage (V) 4.5 5 4.5 4.5 5 Operating Current Min. (mA) 400 500 450 500 450 Max. (mA) 900 1100 1100 1000 1200 Package Outline3 M16 M16 M16 M16 M16
High Power Pulsed Gunn Diodes (Specifications @ 25C)
Part Number MG1034-15 Operating Frequency1 (GHz) 9.3 Min. Power2 (mW) 5 Typ. Operating Voltage (V) 35 Typ. Operating Current (Amps.) 8 Package Outline3 M15
Stacked Pulsed Gunn Diodes (Specifications @ 25C)
Part Number MG1060-15
1
Operating Frequency1 (GHz) 9.3
Min. Power2 (Watts) 10
Typ. Operating Voltage (V) 70
Typ. Operating Current (Amps) 6
Number of Stacks 2
Package Outline3 M15
Microsemi Gunn diodes are specified to operate within a narrow range of a customer-designated center frequency within the operating frequency range shown. Additional frequencies are available; Please contact the factory. 2 Power is measured using a critically coupled test cavity. For pulsed diodes, pulse width = 1 S, duty factor = 1% typ. 3 Polarity: anode is the cap and cathode is the heatsink.
Copyright 2008 Rev: 2009-01-19
Microsemi
Microwave Products
Page 3
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
GUNN Diodes
TM (R)
Cathode Heat Sink
MG1001 - MG1061
Gunn Diodes (Discrete Frequency: Cathode Heatsink)
Typical Characteristics
1.0 300 -50C
Power Output (mW)
0.8
IBias Ratio IThreshold
250 200 90C 150 100 0 2 4 6 8 10 12
0.6 0.4 0.2 0 0 1 2 3
VBias VThreshold
Ratio
Bias Voltage (V)
Power Output vs. Bias Voltage
IBias Ratio vs. VBias Ratio
IMPORTANT: For the most current data, consult our website: www.MICROSEMI.com
Specifications are subject to change. Consult factory for the latest information. These devices are ESD sensitive and must be handled using ESD precautions.
These products are supplied with a RoHS complaint Gold finish.
Copyright 2008 Rev: 2009-01-19
Microsemi
Microwave Products
Page 4
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748

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